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*Imaginile produselor au numai titlu informativ si pot diferi de imaginea reala a produselor. Acest lucru nu schimba caracteristicile lor de baza.
Material
of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.8
Maximum collector-base voltage |Ucb|, V: 80
Maximum collector-emitter voltage |Uce|, V: 60
Maximum emitter-base voltage |Ueb|, V: 8
Maximum collector current |Ic max|, A: 0.7
Maksimalna temperatura (Tj), °C: 175
Transition frequency (ft), MHz: 50
Collector capacitance (Cc), pF: 45
Forward current transfer ratio (hFE), min: 80
Produse asemănătoare
